The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Superior switching speeds of EPC’s eGaN FETs increases the efficiency of power electronics for highly resonant wireless power transfer EL SEGUNDO, Calif.—August 13, 2012 — Efficient Power Conversion ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2020 in New Orleans from March 15 th ...
EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces its Phase Ten Reliability Report, documenting the test results leading to the successful completion of automotive AEC-Q101 qualification. AEC-Q101 ...
EPC introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint offering higher performance & smaller solution size than traditional MOSFETs This is just the first product of a new ...
Alex Lidow to author a monthly column in eeWeb.com entitled “How to GaN,” addressing a range of technical issues related to gallium nitride (GaN) technology including its application in power ...
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