Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse technology has ...

(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...

Stating that not all FinFETs are created equal, Samsung Electronics Co., Ltd., a global leader in advanced semiconductor solutions, today announced that the IP and design enablement ecosystem for its ...

TOKYO, Sept. 23, 2022 (GLOBE NEWSWIRE) -- A Qualitative Research Study accomplished by Data Bridge Market research's database of 350 pages, titled as “Global FinFET Technology Market ” with 100+ ...

FinFET devices were developed to address the need for improved gate control to suppress leakage current (IOFF); DIBL (drain-induced barrier lowering); and process‐induced variability below ...

Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.

It costs nearly three times more to design a finFET-based chip than a 28nm planar chip, and it takes more than twice as long to get working silicon. The foundry business is heating up as some new and ...

Steven Musil is a senior news editor at CNET News. He's been hooked on tech since learning BASIC in the late '70s. When not cleaning up after his daughter and son, Steven can be found pedaling around ...

Globafoundries announced plans to deliver a new leading-edge 7nm FinFET semiconductor technology that will offer the ultimate in performance for the next era of computing applications. This technology ...

Hsinchu, Taiwan – Attopsemi, a pioneering provider of innovative One-Time Programmable (OTP) IP solutions, today announced a significant technological leap: its proprietary I-fuse® technology has ...