MILPITAS, Calif.--(BUSINESS WIRE)--GLOBALFOUNDRIES today accelerated its leading-edge roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM ...

GlobalFoundries today accelerated its roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM offering will give customers the performance and power ...

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition as ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

TSMC 3nm process node is the best FinFET technology and TSMC dominates semiconductor chip fabrication with higher transistor density, better yields on a mature technology and broad adoption by clients ...

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides ...

“Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close proximity ...

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

We're about to enter a very unique era in the world of silicon fabrication. The currently-used FinFET transistors have been in use since 2011, but as nodes continue to shrink they will need to be ...