A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
BEVERLY, Mass. & BIEL, Switzerland--(BUSINESS WIRE)--IXYS Corporation (NASDAQ:IXYS) and Clare, Inc., a wholly owned subsidiary of IXYS, announce the immediate availability of the IXD_630 low-side gate ...
This paper provides details of MOSFET switching action in applications with clamped inductive load, when used as a secondary synchronous rectifier, and driving pulse/gate drive transformers. Potential ...
Properly designing the gate drive circuit for high-voltage MOSFETs is essential to ensure proper performance from the MOSFET one desires. Far too often, engineers find themselves having difficulty in ...
The VLA502-01 is a hybrid integrated circuit (Figure 1) intended as a gate driver for high power IGBT modules. This circuit has been optimized for use with Powerex NFH-Series IGBT modules. However, ...
High power IGBT modules employ hybrid IC gate drives including protection circuits that implement desaturation detection or real time control. ERIC R. MOTTO Powerex Inc. High power IGBT module ...
Power Integrations created an isolated gate drive system for up to four paralleled 1.7-4.5kV power modules – either IGBT or silicon carbide mosfet. Called Scale-iFlex, it is dual channel so, for ...
(Bipolar Junction) Transistors versus MOSFETs: both have their obvious niches. FETs are great for relatively high power applications because they have such a low on-resistance, but transistors are ...
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