SiC MOSFETs are usually susceptible to damage as a result of short-circuiting events because of the fast switching speeds and low on-state resistance. 3 A team of researchers affiliated with the ...
A coupled-electro-thermal RDS(ON) (drain to source ON resistance) co-analysis methodology for Power MOSFET is proposed. The methodology contains two functional modules: 1) physical field solvers and 2 ...
After discussing the three transistor high-side buck p-mosfet driver (a recognised circuit and not mine) with some of EW’s sage commenters, I wondered once again if I could design something similar ...
An empirical sub-circuit was implemented in PSPICE® and is presented. It accurately portrays the vertical DMOS power MOSFET electrical and for the first time, thermal responses. Excellent agreement is ...
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