An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
Philips has developed an advanced Mosfet compact model intended to provide a more accurate description of device behaviours for the 90nm, 65nm and 45nm process generations. Compact models are used as ...
Application Note 7534 July 2004 A New PSPICE Electro-Thermal Subcircuit For Power MOSFETs Alain Laprade, Scott Pearson, Stan Benczkowski, Gary Dolny, Frank Wheatley Abstract An empirical self-heating ...
Although electromechanical relays have historically been the primary load switch in most applications, MOSFETs have been encroaching on the relay's territory in recent years as technology advances ...
New technical paper titled “Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits” from researchers at Federal University of Santa Catarina, Brazil. “This work proposes a truly ...
It shows the response of the device to stimulus in mathematical manner with little or no consideration for the underlying device physics. Semi-physics model describes the semiconductor physics and it ...
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