Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, ...

For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...

SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...

ON Semiconductor has announced two 1200-V silicon carbide (SiC) MOSFET 2-pack modules for the electric vehicle (EV) market, ahead of APEC 2021. The SiC MOSFET modules, based on planar technology, can ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...

SemiQ will be exhibiting its 1.2kV SOT-227 silicon carbide mosfet power modules at APEC, the Applied Power Electronics Conference, at the end of February. The modules come with or without a ...

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...

MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC ...

The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...

UNTERHACHING, GERMANY: The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance ...