Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...

Phoenix, Ariz. – Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These ...

Will contribute to more efficient circuit designs for power converters The SiC-MOSFET controls the current (drain current) flowing from the drain electrode to the source electrode depending on the ...

A technical paper titled “Improved Scheme for Estimating the Embedded Gate Resistance to Reproduce SiC MOSFET Circuit Performance” was published by researchers at ROHM Company. Find the technical ...

Here, a power amplifier circuit has been designed using MOSFET to produce 100 W output to drive a load of about 8 Ω. Here, a power amplifier circuit has been designed using MOSFET to produce 100 W ...

This file type includes high resolution graphics and schematics when applicable. In some situations, it becomes necessary to drive a MOSFET (or IGBT) with a voltage that’s lower than its ...

Download this article in PDF format. It’s now common to see circuit boards that carry hundreds of amps, especially in intensive data-processing applications, electric vehicles, and ac distribution.