Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
Check out more Kit Close-Up videos. This video is also part of the TechXchange: Silicon Carbide (SiC). As electric vehicles are equipped with 400- to 800-V battery packs, the power systems under the ...
These releases underscore NoMIS Power's continued expansion toward higher-voltage and higher-current SiC devices and mark NoMIS' first 1.7 kV SiC MOSFET offering, with high-resistance small-die ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...
ST’s galvanically isolated automotive gate driver for SiC MOSFETs and IGBTs gives flexibility to control inverters of different power ratings featuring programmable protections and diagnostics that ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
TI introduced several new isolated gate drivers that provide monitoring and protection for high-voltage systems. The devices are claimed to be the first to offer integrated sensing features for IGBTs ...
Over the years, low losses possible by high breakdown field made silicon carbide (SiC) MOSFETs extremely popular amongst engineers. At present, they are mostly used in areas where IGBTs (Insulated ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire / -- STMicroelectronics' STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST's latest robust galvanic ...
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...
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