Even as industry moves into the era of the high k metal gate (HKMG) and FinFET transistor, chipmakers continue to seek ways to improve device performance. One of the latest advances and the subject of ...

Device scaling is getting much harder at each new process node. Even defining what it means is becoming a challenge. In the past, gate length and metal pitch went down and device density went up.

(Nanowerk News) One promising application of GeSn would be as stressor material for Ge channels. To outperform current uniaxial compressive strained Si channel pMOSFET technology (with embedded SiGe ...

—The development of a process flow capable of demonstrating functionality of a monolithic complementary FET (CFET) transistor architecture is complex due to the need to vertically separate nMOS and ...

Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...