This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...

Infineon has put a 650V silicon IGBT alongside a silicon carbide diode in the same TO-247 packages. “Due to a freewheeling SiC Schottky barrier diode, the CoolSiC Hybrid IGBTs perform with ...

IXYS Corporationan introduced the first of a new range of 83mm diameter die rectifier diodes. The new 2.2kV rectifier, has a current rating of 15,450 amperes, represent a new technology platform for ...

NANJING, China--(BUSINESS WIRE)--Today, SMC Diode Solutions, an American-led semiconductor design and manufacturing company, celebrated the opening of its second power discrete fab in Nanjing, China.

Nexperia has introduced 120V silicon germanium (SiGe) rectifier diodes “with reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of ...

Nexperia has entered into a partnership with KYOCERA AVX Components to jointly produce a 650 V, 20 A silicon carbide (SiC) rectifier module. Intended for high frequency power applications ranging from ...

With Linear Technology’s LT4320 ideal-diode bridge controller, power supply designers can replace each of the four diodes in a conventional full-wave bridge rectifier with a low-loss N-channel MOSFET.

There have been great efforts over the past decade to obtain useful, that is, technologically viable and efficient, light emission from silicon both in the visible and infrared regions of the spectrum ...

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental ...

Aselectronics miniaturization heads towards a theoretical physical limit in thetens of nanometers, new methods of manufacturing are required to producetransistors, diodes, and other fundamental ...

Replacing the silicon rectifier diodes in a full-wave bridge with N-type MOSFETs eliminates the V f drop in each conducting pair. The effects of the gain in efficiency are not trivial. To accomplish ...