The invention of the transistor in 1947 by Shockley, Bardeen and Brattain at Bell Laboratories ushered in the age of microelectronics and revolutionized our lives. First, so-called bipolar transistors ...

Transistors come in different flavors. Tubes used an electric field to regulate current flow, and researchers wanted to find something that worked the same way without the drawbacks like vacuum and ...

Bipolar transistors, essential components in a myriad of electronic devices, are highly susceptible to the adverse impacts of radiation. Ionising radiation introduces defects within the semiconductor ...

New technical paper titled “Organic bipolar transistors” from researchers at Technische Universität Dresden, NanoP, Technische Hochschule Mittelhessen, University of Applied Science, and ALBA ...

Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

The DXTN/P 78Q and 80Q series feature ultra-low VCE(sat) NPN and PNP transistors designed for demanding automotive power switching and control applications. These devices promise enhanced conduction ...

Targeting the high power demands of high-end and professional audio applications, the MJL4281A (npn) and MJL4302A (pnp) audio bipolar transistors offer a sustained collector-to-emitter voltage of 350 ...

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

The following application note shows the use of a PNP transistor together with a linear charger IC to create a charger for Lithium batteries. To view the application note, click on the URL below.

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...