Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Abstract: The specific contact resistivity of Ni(Pt)Si silicide layers on Si active areas has been assessed using the transfer length method (TLM) for a broad range of pre-amorphization implantation ...
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