Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...
Solid and scalable CI/CD pipelines are an essential pillar for being competitive and creating a great product. But why are most of us a little afraid of touching YAML files and don't even dare to look ...
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